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1

[IEEE 2011 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2011) - Incheon, Korea (South) (2011.07.4-2011.07.7)] 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Non-ideal characteristic analysis of GaN-based light-emitting diode using current-voltage (I–V) and low-frequency noise experiment

Jungjin Park,, Taewook Kang,, Daeyoung Woo,, Joong-Kon Son,, Jong-Ho Lee,, Byung-Gook Park,, Hyungcheol Shin,

Year:

2011

Language:

english

File:

PDF, 297 KB

english, 2011

2

Efficient Alternating Current Operated White Light-Emitting Diode Chip

Onushkin, G.A., Young-Jin Lee, Jung-Ja Yang, Hyung-Kun Kim, Joong-Kon Son, Gil-Han Park, YongJo Park

Journal:

IEEE Photonics Technology Letters

Year:

2009

Language:

english

File:

PDF, 340 KB

english, 2009

3

63.4: Extraction of the Location and the Energy Level of the Trap using Random Telegraph Noise in GaN-based Light-Emitting Diode

Jungjin Park, Donghoon Kang, Joong-Kon Son, Hyungcheol Shin

Journal:

SID Symposium Digest of Technical Papers

Year:

2012

Language:

english

File:

PDF, 586 KB

english, 2012

4

Local electroluminescence and time-resolved photoluminescence study of InGaN light-emitting diodes

Onushkin, Grigory A., Hong, Sang-Su, Lee, Jin-Hyun, Park, June-Sik, Son, Joong-Kon, Kim, Min-Ho, Park, YongJo

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 399 KB

english, 2009

5

Blue light emitting diode internal and injection efficiency

Titkov, Ilya E., Sannikov, Denis A., Park, Young-Min, Son, Joong-Kon

Journal:

Year:

2012

Language:

english

File:

PDF, 366 KB

english, 2012

6

Extraction of Location and Energy Level of the Trap Causing Random Telegraph Noise at Reverse-Biased Region in GaN-Based Light-Emitting Diodes

Park, Jungjin, Kang, Donghoon, Son, Joong-Kon, Shin, Hyungcheol

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 1016 KB

english, 2012

7

Enhancement of Radiative Recombination by Different Indium Composition of Multiple Quantum Barriers in GaN-Based Light-Emitting Diodes

Park, Euyhwan, Kim, Garam, Kim, Wandong, Kim, Janghyun, Kang, Donghoon, Son, Joong-Kon, Park, Byung-Gook

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 1.09 MB

english, 2013

8

[IEEE 2013 IEEE International Nanoelectronics Conference (INEC) - Singapore, Singapore (2013.01.2-2013.01.4)] 2013 IEEE 5th International Nanoelectronics Conference (INEC) - Various size images mapping technique to analyze trap-assisted non-radiative recombination mechanism using Cathodo- and Electro- Luminescences measurement in GaN-based LEDs

Park, Euyhwan, Kim, Garam, Kim, Janghyun, Kang, Donghoon, Son, Joong-Kon, Park, Byung-Gook

Year:

2013

File:

PDF, 1.56 MB

2013

9

[IEEE 2012 IEEE 12th International Conference on Nanotechnology (IEEE-NANO) - Birmingham, United Kingdom (2012.08.20-2012.08.23)] 2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO) - Cathodo- and electro- luminescences image mapping technique to study traps in GaN-based LEDs

Euyhwan Park,, Garam Kim,, Janghyun Kim,, Donghoon Kang,, Joong-Kon Son,, Byung-Gook Park,

Year:

2012

Language:

english

File:

PDF, 1.09 MB

english, 2012

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